open access

https://hdl.handle.net/2115/6126

Composition and electronic properties of electrochemically deposited CdTe films

英語

1984-05-15

American Institute of Physics

Journal of Applied Physics

55(10)

3879-3881

The composition, type of semiconductivity, and resistivity of CdTe films deposited electrochemically from an aqueous solution of pH=1.4 containing 1 M CdSO4 and 1 mM TeO2 were investigated. X-ray diffraction peaks confirmed the formation of CdTe in the films deposited at potentials between –0.20 and –0.65 V (vs Ag/AgCl). The films deposited at potentials more positive than –0.35 V contained free Te in addition to CdTe. X-ray measurements showed that the more positive the deposition potential, the higher the concentration of free Te in the film. Auger electron spectroscopy measurements also confirmed that the Te/Cd ratio was higher in the films deposited at more positive potentials. The films deposited at potentials more positive than –0.35 V were p type and those deposited at more negative potentials were n type. The relation between the deposition potential and sheet resistance was ``volcano'' like and it seemed that the films deposited around –0.35 V where the semiconductivity of the films changed showed maximum resistivity.

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Copyright © 1984 American Institute of Physics

0021-8979