Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo et al.

Physica status solidi A applications and materials science, 2015, 212(5), 1075-1080

Permalink : https://hdl.handle.net/2115/61442

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アクセス権	open access
URI	https://hdl.handle.net/2115/61442
タイトル	Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
著者	Yatabe, Zenji ; Asubar, Joel T. ; Sato, Taketomo ; Hashizume, Tamotsu
著者名 Yatabe, Zenji
著者名 Asubar, Joel T.
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
キーワード	Al2O3
	AlGaN
	dry etching
	high electron mobility transistors
	interface states
	metal-insulator-semiconductor structures
発行日	2015-05
出版者	Wiley-Blackwell
収録物名	Physica status solidi A applications and materials science
巻(号)	212(5)
ページ	1075-1080
抄録	We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al2O3/AlGaN/GaN structures. The experimentally measured capacitance-voltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al2O3/AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al2O3/AlGaN interface.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	"This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 212, Issue 5, pages 1075–1080, May 2015, which has been published in final form at http://doi.org/10.1002/pssa.201431652 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving."
PISSN	1862-6300
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1002/pssa.201431652