Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Shimabayashi, Masaharu; Kurihara, Kazuaki; Horikawa, Yoshimine; Sasaki, Koichi

Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Shimabayashi, Masaharu; Kurihara, Kazuaki; Horikawa, Yoshimine et al.

Japanese Journal of Applied Physics (JJAP), 2016, 55(3), 036503

Permalink : https://hdl.handle.net/2115/64517

このアイテムのアクセス数:835件（2026-08-25 08:10 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
RP150510	pdf	666 KB	777

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/64517
タイトル	Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas
著者	Shimabayashi, Masaharu ; Kurihara, Kazuaki ; Horikawa, Yoshimine ; Sasaki, Koichi
著者名 Shimabayashi, Masaharu
著者名 Kurihara, Kazuaki
著者名 Horikawa, Yoshimine
e-Rad_Researcher 50235248 著者名 Sasaki, Koichi
言語	英語
発行日	2016-03
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics (JJAP)
巻(号)	55(3)
ページ	036503
抄録	We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable A(3)Sigma(+)(u) state. As a result, it was found that molecular nitrogen in the A(3)Sigma(+)(u) state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable A(3)Sigma(+)(u) state.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© 2016 The Japan Society of Applied Physics
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.7567/JJAP.55.036503