Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya et al.

ECS Transactions, 2016, 75(5), 265-270

Permalink : https://hdl.handle.net/2115/64540

このアイテムのアクセス数:824件（2026-08-12 08:20 集計）

閲覧可能ファイル 

ファイル フォーマット サイズ 閲覧回数 説明
ECS Trans.-2016-Yoshida-265-70-SAG of InGaAs on Ge pdf 275 KB 969

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/64540
タイトル
Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
著者
Yoshida, Akinobu ; Tomioka, Katsuhiro ; Ishizaka, Fumiya ; Chiba, Kohei ; Motohisa, Junichi
著者名
Yoshida, Akinobu
e-Rad_Researcher
60519411
著者名
Tomioka, Katsuhiro
著者名
Ishizaka, Fumiya
著者名
Chiba, Kohei
e-Rad_Researcher
60212263
著者名
Motohisa, Junichi
言語
英語
発行日
2016-10
出版者
The Electrochemical Society (ECS)
収録物名
ECS Transactions
巻(号)
75(5)
ページ
265-270
抄録
III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, we report direct integration of InGaAs nanowires (NWs) on Ge(111) substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE) for realization of high carrier mobility InGaAs/Ge hybrid CMOS applications, and characterization of the composition and growth modes of InGaAs NWs by X-ray diffraction (XRD) measurement.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
© The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 265-270 (2016).
PISSN
1938-6737
EISSN
1938-5862
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1149/07505.0265ecst