Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Kumazaki, Yusuke; Matsumoto, Satoru; Sato, Taketomo

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Kumazaki, Yusuke; Matsumoto, Satoru; Sato, Taketomo

Journal of The Electrochemical Society, 2017, 164(7), H477-H483

Permalink : https://hdl.handle.net/2115/66290

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アクセス権	open access
URI	https://hdl.handle.net/2115/66290
タイトル	Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
著者	Kumazaki, Yusuke ; Matsumoto, Satoru ; Sato, Taketomo
著者名 Kumazaki, Yusuke
著者名 Matsumoto, Satoru
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
言語	英語
キーワード	anisotropic etching
	electrochemical etching
	GaN
	nano structure
	photocatalyst
	photoelectrode
	porous structure
	tetramethylammonium hydroxide (TMAH)
	water splitting
発行日	2017-05-12
出版者	The Electrochemical Society (ECS)
収録物名	Journal of The Electrochemical Society
巻(号)	164(7)
ページ	H477-H483
抄録	A low-damaged wet process utilizing electrochemical (EC) etching and subsequent chemical etching has been developed for the fabrication of GaN porous structures. Superior controllability in depth and diameter could be obtained by achieving anisotropic nature of the vertical direction to the substrate by EC etching and horizontal direction by tetramethylammonium hydroxide (TMAH) etching, respectively. The optical and photoelectrochemical properties of GaN porous structures were very sensitive to the structural properties. Photoreflectance measurement revealed that porous sample had an effective refractive index that could be controlled by TMAH etching time. In photoelectrochemical measurement, the incident-photon-to-current conversion efficiency (IPCE) was dramatically enhanced to as high as 91% by the formation of porous structures. A series of experimental results were consistently explained by the change of thickness of pore wall and width of space charge region.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Creative Commons Attribution 4.0 International
PISSN	0013-4651
EISSN	1945-7111
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1149/2.0771707jes