Structural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices

Abe, Yushi; Kuroda, Ryota; Ying, Xiang et al.

Japanese Journal of Applied Physics(JJAP), 2015, 54(6S1), 06FG02

Permalink : https://hdl.handle.net/2115/66632

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アクセス権
open access
URI
https://hdl.handle.net/2115/66632
タイトル
Structural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices
著者
Abe, Yushi ; Kuroda, Ryota ; Ying, Xiang ; Sato, Masaki ; Tanaka, Takayuki ; Kasai, Seiya
著者名
Abe, Yushi
著者名
Kuroda, Ryota
著者名
Ying, Xiang
著者名
Sato, Masaki
e-Rad_Researcher
10282914
著者名
Tanaka, Takayuki
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
言語
英語
発行日
2015-06
出版者
IOP Publishing
収録物名
Japanese Journal of Applied Physics(JJAP)
巻(号)
54(6S1)
ページ
06FG02
抄録
We investigated the structural parameter dependence of the directed current in GaAs-nanowire-based Brownian ratchet devices. The directed current was generated by flashing a ratchet potential array repeatedly using multiple asymmetric gates with a periodic signal. The amount of current in the fabricated device increased as the nanowire width W decreased, which contradicted the theoretical model. The current also depended on the number of the gates N, when N was smaller than 6. We discussed the obtained results in terms of the structural parameter dependence of carrier transfer efficiency and the effect of electron reservoirs on current generation in flashing ratchet operation.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
© 2015 The Japan Society of Applied Physics
PISSN
0021-4922
EISSN
1347-4065
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.7567/JJAP.54.06FG02