open access

https://hdl.handle.net/2115/66895

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

英語

Illumination

2016-08-01

American Institute of Physics (AIP)

Applied physics letters

109(5)

051106

We investigated the surface photovoltage (SPV) effect in n-GaN layers passivated with various insulators, i.e., Al2O3, SiO2, and SiN for ultraviolet (UV) light detection. We revealed that SPV in SiN/GaN shows markedly different behaviour than in oxide/GaN, i.e., the photo-signal exhibited very fast response (1 s) and recovery (2 s) times, contrary to oxide/GaN, and it was thermally stable up to 523 K. Furthermore, SPV spectra for SiN/GaN showed a sharp cut-off edge directly corresponding to the GaN band gap. We explained these results in terms of the different band structure of SiN/GaN and oxide/GaN junctions. All the observed properties of SPV response from SiN/GaN indicate that this relatively simple system can be applied to sensitive high temperature visible-blind UV detection. Published by AIP Publishing.

学術雑誌論文

Version of Record

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 109, 051106 (2016) and may be found at http://scitation.aip.org/content/aip/journal/apl/109/5/10.1063/1.4960484.

0003-6951