Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke et al.

Nanoscale, 2016, 8(31), 14754-14766

Permalink : https://hdl.handle.net/2115/67028

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アクセス権
open access
URI
https://hdl.handle.net/2115/67028
タイトル
Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles
著者
Arita, Masashi ; Ohno, Yuuki ; Murakami, Yosuke ; Takamizawa, Keisuke ; Tsurumaki-Fukuchi, Atsushi ; Takahashi, Yasuo
e-Rad_Researcher
20222755
著者名
Arita, Masashi
著者名
Ohno, Yuuki
著者名
Murakami, Yosuke
著者名
Takamizawa, Keisuke
著者名
Tsurumaki-Fukuchi, Atsushi
著者名
Takahashi, Yasuo
言語
英語
発行日
2016-08
出版者
Royal Society of Chemistry
収録物名
Nanoscale
巻(号)
8(31)
ページ
14754-14766
抄録
The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
2040-3364
関連情報
PMID
27456192
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1039/c6nr02602h