Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures

Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro et al.

Japanese Journal of Applied Physics, 2017, 56(1), 010311

Permalink : https://hdl.handle.net/2115/68025

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アクセス権
open access
URI
https://hdl.handle.net/2115/68025
タイトル
Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures
著者
Ishizaka, Fumiya ; Hiraya, Yoshihiro ; Tomioka, Katsuhiro ; Motohisa, Junichi ; Fukui, Takashi
著者名
Ishizaka, Fumiya
著者名
Hiraya, Yoshihiro
著者名
Tomioka, Katsuhiro
e-Rad_Researcher
60212263
著者名
Motohisa, Junichi
e-Rad_Researcher
30240641
著者名
Fukui, Takashi
言語
英語
発行日
2017-01
出版者
IOP Publishing
収録物名
Japanese Journal of Applied Physics
巻(号)
56(1)
ページ
010311
抄録
We report on the selective-area growth and characterization of wurtzite (WZ) InP/AlGaP core–multishell nanowires. Quantum well (QW) structures were fabricated in AlGaP multishells by changing the alloy composition. Transmission electron microscopy revealed that the AlGaP multishells were grown with a WZ structure on the side of the WZ InP core. The lattice constants of the WZ InP core and WZ AlGaP shell were determined by X-ray diffraction. Cathodoluminescence studies showed that the WZ AlGaP QW with an Al composition of 20% exhibited green emissions at 2.37 eV. These results open the possibility of fabricating green light-emitting diodes using WZ AlGaP-based materials.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
© 2017 The Japan Society of Applied Physics
PISSN
0021-4922
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.7567/JJAP.56.010311