Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo et al.

Journal of Applied Physics, 2017, 121(18), 184501

Permalink : https://hdl.handle.net/2115/70195

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アクセス権	open access
URI	https://hdl.handle.net/2115/70195
タイトル	Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
著者	Kumazaki, Yusuke ; Uemura, Keisuke ; Sato, Taketomo ; Hashizume, Tamotsu
著者名 Kumazaki, Yusuke
著者名 Uemura, Keisuke
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
発行日	2017-05-14
出版者	American Institute of Physics (AIP)
収録物名	Journal of Applied Physics
巻(号)	121(18)
ページ	184501
抄録	The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	The following article appeared in Journal of Applied Physics 121, 184501 (2017) and may be found at http://aip.scitation.org/doi/10.1063/1.4983013.
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4983013