open access

https://hdl.handle.net/2115/70800

GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform

英語

GeSn quantum wells

2018-11

IEEE (Institute of Electrical and Electronics Engineers)

IEEE journal of selected topics in quantum electronics

24(6)

3400208

We propose a taper coupler electroabsorption modulator (EAM) composed of GeSn/SiCeSn multiple-quantum-well (MQW) on Ge-on-Si platform for mid-infrared (2 mu m) integrated optical active devices. The epitaxial design is performed by calculating the absorption spectra of GeSn/SiGeSn MQW using many-body theory to investigate the extinction characteristics of GeSn MQW waveguides. Two types of taper couplers are considered for connecting Ge-rib waveguide and GeSn-MQW-highmesa waveguide efficiently. One is an adiabatic taper coupler (ATC) type EAM and it is useful for thin Ge-buffer structure in terms of the extinction ratio. Another is a resonant taper coupler (RTC) type EAM and it is superior to ATC type EAM for thick Ge-buffer. It is confirmed that RTC type EAM can obtain the high extinction characteristics with low-loss and shorter device length (6.87 dB, -3.97 dB, and 215 mu m) compared with conventional ATC type EAM for thick Ge-buffer (5.67 dB, -4.9 dB, and 340 mu m).

学術雑誌論文

Accepted Manuscript

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

1077-260X