Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya

Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya et al.

Applied Physics Express (APEX), 2018, 11(12), 124102

Permalink : https://hdl.handle.net/2115/72143

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アクセス権	open access
URI	https://hdl.handle.net/2115/72143
タイトル	Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
著者	Hashizume, Tamotsu ; Kaneki, Shota ; Oyobiki, Tatsuya ; Ando, Yuji ; Sasaki, Shota ; Nishiguchi, Kenya
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
著者名 Kaneki, Shota
著者名 Oyobiki, Tatsuya
著者名 Ando, Yuji
著者名 Sasaki, Shota
著者名 Nishiguchi, Kenya
言語	英語
発行日	2018-12
出版者	IOP Publishing
収録物名	Applied Physics Express (APEX)
巻(号)	11(12)
ページ	124102
抄録	In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V) characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300-400 degrees C. The PMA sample showed state densities of only at most 4 x 10(10) cm(-1) eV(-1). A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al2O3/GaN interface, leading to the improved bond termination and bonding order configuration along the interface. (C) 2018 The Japan Society of Applied Physics
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Creative Commons Attribution 4.0 International
権利情報	©2018 The Japan Society of Applied Physics
PISSN	1882-0778
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.7567/APEX.11.124102