Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi

Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya et al.

Journal of Crystal Growth, 2017, 464, 75-79

Permalink : https://hdl.handle.net/2115/73581

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アクセス権	open access
URI	https://hdl.handle.net/2115/73581
タイトル	Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
著者	Yoshida, Akinobu ; Tomioka, Katsuhiro ; Ishizaka, Fumiya ; Motohisa, Junichi
著者名 Yoshida, Akinobu
e-Rad_Researcher 60519411 著者名 Tomioka, Katsuhiro
著者名 Ishizaka, Fumiya
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi
言語	英語
キーワード	Nanostructures
	Metalorganic vapor phase epitaxy
	Selective epitaxy
	Nanomaterials
	Semiconducting germanium
	Semiconducting III-V materials
発行日	2017-04-15
出版者	Elsevier
収録物名	Journal of Crystal Growth
巻(号)	464
ページ	75-79
抄録	We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	© 2016, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
PISSN	0022-0248
NCID	AA00696341
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jcrysgro.2016.10.083