open access

https://hdl.handle.net/2115/73809

Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature

英語

2018-05

IOP Publishing

Japanese Journal of Applied Physics (JJAP)

57(5)

056201

We remotely irradiated a nitrogen plasma onto the carbon-side surface of 4H-SiC at a low temperature, and examined the effect of sample cooling on the characteristics of the nitride layer. An improved nitride layer, which had higher concentrations of carbon and silicon and a lower concentration of oxygen, was formed in the region at depths of more than 0.6-0.9nm from the top surface. The depth of the fragile nitride layer in the top region, where no improved characteristics of the nitride layer were observed, became smaller with sample cooling. In addition, on the basis of the experimental results, we discussed the difference in the activation energy of the nitriding reaction of 4H-SiC supported by atomic nitrogen and molecular nitrogen in the metastable A(3)Sigma(+)(U) state.

学術雑誌論文

Accepted Manuscript

© 2018 The Japan Society of Applied Physics

0021-4922