open access

https://hdl.handle.net/2115/74553

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

英語

2018-06-04

American Institute of Physics (AIP)

Applied physics letters

112(23)

232102

In this study, we report that the carrier mobility of 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness, whereas it is unrelated to the film/substrate lattice mismatch (+5.4% for SrTiO3 and -2.3% for MgO). The films exhibited large differences in lattice parameters, lateral grain sizes (similar to 85 nm for SrTiO3 and similar to 20 nm for MgO), surface morphologies, threading dislocation densities, and misfit dislocation densities. However, the mobility dependences on the film thickness in both cases were almost the same, saturating at similar to 100 cm(2) V-1 s(-1), while the charge carrier densities approached the nominal carrier concentration (=[2% La3+]). Our study clearly indicates that the carrier mobility of LBSO films strongly depends on the thickness. These results would be beneficial for understanding the carrier transport properties and fruitful to further enhance the mobility of LBSO films. Published by AIP Publishing.

学術雑誌論文

Version of Record

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Anup V. Sanchela, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta. Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3. Appl. Phys. Lett. 112, 232102 (2018) and may be found at https://doi.org/10.1063/1.5033326 .

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