open access

https://hdl.handle.net/2115/75112

Fast operation of a WO3-based solid-state electrochromic transistor

英語

2019-02

American Institute of Physics (AIP)

AIP Advances

9(2)

025122

Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed so far, their operating speed is still slow (operating time >1 min) as compared to liquid-based ECTs (similar to 20 s) due to their asymmetric gate-source electrode configuration. Here we demonstrate a fast operation of a solid-state ECT. We fabricated a solid-state ECT with three terminal gate-source-drain electrodes using an amorphous WO3 film as the electrochromic material and amorphous TaOx as the solid electrolyte. By the insertion of a thin ZnO layer between the source and drain electrodes to achieve pseudo symmetric gate-source electrode configuration, we greatly reduced the operation time to less than 1 s at +/- 3 V application while keeping the on-to-off ratio of similar to 30. The present approach is effective to improve the operating speed of ECTs and may be practically used in advanced memory technologies. (C) 2019 Author(s).

学術雑誌論文

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Creative Commons Attribution 4.0 International

© 2019 Takaki Onozato, Yukio Nezu, Hai Jun Cho, and Hiromichi Ohta

2158-3226