open access

https://hdl.handle.net/2115/75278

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

英語

2019-06-01

IOP Publishing

Japanese Journal of Applied Physics (JJAP)

58

SCCD20

Recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) were fabricated by utilizing a photoelectrochemical (PEC) etching and a post-metallization annealing (PMA) process. In order to demonstrate the device performance and reliability, both electrical and optical electroluminescence (EL) properties were evaluated. The capacitance-voltage (C-V) characteristic showed that the PEC etching and subsequent PMA process enhanced the gate control of two-dimensional electron gas density. The PEC-etched-gate AlGaN/GaN MIS-HEMT showed the smallest sub-threshold slope of all the samples including planar-gate and inductively coupled plasma-etchedgate devices. Furthermore, the PEC-etched devices showed an extremely low 10(-11) A mm(-1) gate leakage current with no spot-like EL. These results indicated that the PEC etching and subsequent PMA process improved the electrical properties of the Al2O3/AlGaN interface, resulting in enhanced device performance of the AlGaN/GaN MIS-HEMTs. (C) 2019 The Japan Society of Applied Physics

学術雑誌論文

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Creative Commons Attribution 4.0 International

0021-4922