open access

https://hdl.handle.net/2115/75819

Amplified spontaneous emission from a surface-modified GaN film fabricated under pulsed intense UV laser irradiation

英語

2018-10-22

American Institute of Physics (AIP)

Applied Physics Letters

113(17)

171606

We propose a simple method for fabricating random structures directly on Mg-doped GaN thin films. The process is relatively simple, involving only irradiation with strong UV pulses from a fabrication laser on the thin-film surface. After intense UV laser pulses (>400 MW/cm2) are irradiated on the flat GaN film, the surface is roughened and quasi-periodic structures form. When the roughened surface is excited with laser light of intensity about 10 times smaller than the fabrication laser intensity, emission increases around 367 nm, and spectral narrowing and threshold behavior are observed. Because such behaviors are not observed without the application of intense laser irradiation, we conclude that amplified spontaneous emission is induced in the modified GaN surface by the intense UV laser pulse irradiation. This method offers the possibility of easy and direct fabrication of microscale random-laser devices on semiconductor substrates.

学術雑誌論文

Version of Record

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Hideki Fujiwara and Keiji Sasaki. Amplified spontaneous emission from a surface-modified GaN film fabricated under pulsed intense UV laser irradiation Appl. Phys. Lett. 113, 171606 (2018) and may be found at https://aip.scitation.org/doi/10.1063/1.5040551 .

0003-6951