Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

Goto, Y.; Yanase, T.; Shimada, T. et al.

AIP Advances, 2019, 9(8), 085322

Permalink : https://hdl.handle.net/2115/75901

このアイテムのアクセス数:503件（2026-08-13 15:55 集計）

ファイル	フォーマット	サイズ	閲覧回数	説明
https://doi.org/10.1063/1.5113544			26

アクセス権	open access
URI	https://hdl.handle.net/2115/75901
タイトル	Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
著者	Goto, Y. ; Yanase, T. ; Shimada, T. ; Shirai, M. ; Nagahama, T.
著者名 Goto, Y.
著者名 Yanase, T.
著者名 Shimada, T.
著者名 Shirai, M.
著者名 Nagahama, T.
言語	英語
発行日	2019-08
出版者	American Institute of Physics (AIP)
収録物名	AIP Advances
巻(号)	9(8)
ページ	085322
抄録	In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence. (C) 2019 Author(s).
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Creative Commons Attribution 4.0 International
PISSN	2158-3226
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.5113544