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アクセス権	open access
URI	https://hdl.handle.net/2115/76637
タイトル	Smooth epitaxial copper film on sapphire surface suitable for high quality graphene growth
著者	Ma, Tao ; Ariga, Hiroko ; Takakusagi, Satoru ; Asakura, Kiyotaka
著者名 Ma, Tao
e-Rad_Researcher 90570911 著者名 Ariga, Hiroko
e-Rad_Researcher 30359484 著者名 Takakusagi, Satoru
e-Rad_Researcher 60175164 著者名 Asakura, Kiyotaka
言語	英語
キーワード	Epitaxial growth
	Cu(111) films
	Crystal orientation
	Roughness
	Chemical vapor deposition
	Defects
発行日	2018-01-31
出版者	Elsevier
収録物名	Thin solid films
巻(号)	646
ページ	12-16
抄録	Graphene, a two-dimensional material, can be grown on a metal substrate using chemical vapor deposition - this growth process is notably influenced by the crystal orientation and the roughness of the substrate surface. We prepared epitaxial Cu(111) films on sapphire substrates using thermal evaporation at various substrate temperatures and studied their crystal orientation and roughness. The well crystallized Cu(111) film with a smooth surface was obtained when the substrate was maintained at 473 K during the deposition. High quality graphene with few intrinsic defects was grown on this Cu film.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
PISSN	0040-6090
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.tsf.2017.11.009

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