Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima

Hiura, Satoshi; Urabe, Masayuki; Takeishi, Kazuki; Itabashi, Kodai; Takayama, Junichi; Kiba, Takayuki; Sueoka, Kazuhisa; Murayama, Akihiro

Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima

Hiura, Satoshi; Urabe, Masayuki; Takeishi, Kazuki et al.

Semiconductor science and technology, 2019, 34(2), 025001

Permalink : https://hdl.handle.net/2115/76671

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アクセス権	open access
URI	https://hdl.handle.net/2115/76671
タイトル	Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima
著者	Hiura, Satoshi ; Urabe, Masayuki ; Takeishi, Kazuki ; Itabashi, Kodai ; Takayama, Junichi ; Kiba, Takayuki ; Sueoka, Kazuhisa ; Murayama, Akihiro
著者名 Hiura, Satoshi
著者名 Urabe, Masayuki
著者名 Takeishi, Kazuki
著者名 Itabashi, Kodai
著者名 Takayama, Junichi
著者名 Kiba, Takayuki
e-Rad_Researcher 60250479 著者名 Sueoka, Kazuhisa
e-Rad_Researcher 00333906 著者名 Murayama, Akihiro
言語	英語
キーワード	quantum dots
	InGaAs
	carrier dynamics
	spin dynamics
	laterally coupled quantum dots
	carrier transfer
発行日	2019-02
出版者	IOP Publishing
収録物名	Semiconductor science and technology
巻(号)	34(2)
ページ	025001
抄録	Interdot carrier and spin dynamics were studied in a two-dimensional array of high-density small quantum dots (SQDs) of InGaAs with an average diameter of 16 nm and a sheet density of 1.2 x 10(11) cm(-2), in which 24 nm diametric large QDs (LQDs) were embedded as local potential minima. We observed a delayed photoluminescence (PL) rise from the lower-lying LQD states and a considerably faster PL decay from the higher-lying SQD states, indicating carrier transfer from the two-dimensionally coupled SQDs into the LQDs. In addition, inverse carrier tunneling from the LQDs into the SQDs was thermally induced, which is characterized by the thermal activation energy between the LQDs and SQDs. Moreover, circularly polarized transient PL behavior from the SQD states exhibits a suppression of the spin polarization decay in the initial time region, depending on the excited spin density. This tentatively suppressed spin relaxation can be quantitatively explained by selective interdot transfer of minority-spin electrons from the SQDs into LQDs, when the majority spin states in both QDs are sufficiently populated by excited spins. These findings indicate that the high-density SQDs behave as the main emitters with suppressed spin relaxation, while the scattered LQDs with lower potential behave as the receivers of minority-spin electrons.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported
権利情報	This is a peer-reviewed, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology, Volume 34, Number 2. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aaf7aa.
PISSN	0268-1242
EISSN	1361-6641
NCID	AA10695094
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1088/1361-6641/aaf7aa