Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions

Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo

Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions

Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa et al.

Applied Physics Express, 2019, 12(6), 066504

Permalink : https://hdl.handle.net/2115/78270

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アクセス権	open access
URI	https://hdl.handle.net/2115/78270
タイトル	Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions
著者	Toguchi, Masachika ; Miwa, Kazuki ; Horikiri, Fumimasa ; Fukuhara, Noboru ; Narita, Yoshinobu ; Yoshida, Takehiro ; Sato, Taketomo
著者名 Toguchi, Masachika
著者名 Miwa, Kazuki
著者名 Horikiri, Fumimasa
著者名 Fukuhara, Noboru
著者名 Narita, Yoshinobu
著者名 Yoshida, Takehiro
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
言語	英語
発行日	2019-05-31
出版者	IOP Publishing
収録物名	Applied Physics Express
巻(号)	12(6)
ページ	066504
抄録	Electrodeless photo-assisted electrochemical etching was successfully demonstrated using a H-3 PO4-based solution containing S2O82- ions. The pH value of the solution changed under UVC illumination, clearly showing that SO4- radicals were produced from S2O82- ions by absorbing UVC light. The production rate of SO4- radicals maintained a constant value over the wide pH range of the solution, leading to etching rates and surface roughness comparable to those obtained in KOH-based solutions. The positive-type photoresist was applicable as the etching mask for the H3PO4-based solution. This finding will contribute to the development of a simple wet etching process suitable for the manufacturing of GaN-based devices.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	© 2019 The Japan Society of Applied Physics
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/1882-0786/ab21a1
PISSN	1882-0778
NCID	AA12295133
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.7567/1882-0786/ab21a1