open access

https://hdl.handle.net/2115/78610

Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers

英語

2019-12-01

American Institute of Physics (AIP)

AIP Advances

9(12)

125245

We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane currents I are applied to Hall devices made of structures exposed to in-plane magnetic fields H-in along the channel direction. Clear asymmetric magnetization switching with respect to the polarity of I and H-in is detected for the Ta/MnGa/NiAl device. Similar asymmetric magnetization switching is observed for the Ta/MnGa/Cr device, although the magnetization is partially switched regardless of the polarity of I and Hin. These results suggest that an in-plane magnetization component opposite to Hin is present in the Cr-buffer structure and that the formation of such a component is suppressed in the NiAl-buffer structure. (C) 2019 Author(s).

学術雑誌論文

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Copyright 2019 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.