Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs

Akamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, Junichi

Nanotechnology, 2020, 31(39), 394003

Permalink : https://hdl.handle.net/2115/79173

このアイテムのアクセス数:542件（2026-08-16 14:25 集計）

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https://doi.org/10.1088/1361-6528/ab9bd2     24

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/79173
タイトル
Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs
著者
Akamatsu, Tomoya ; Tomioka, Katsuhiro ; Motohisa, Junichi
著者名
Akamatsu, Tomoya
e-Rad_Researcher
60519411
著者名
Tomioka, Katsuhiro
e-Rad_Researcher
60212263
著者名
Motohisa, Junichi
言語
英語
キーワード
nanowire
light-emitting diode
selective-area growth
metal-organic vapor-phase epitaxy
indium phosphide
発行日
2020-09-25
出版者
IOP Publishing
収録物名
Nanotechnology
巻(号)
31(39)
ページ
394003
抄録
Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize various quantum structures with excellent position and size controllability, utilizing a wide range of materials for heterostructures. In addition, enhancing light extraction and controlling spontaneous emission by modifying their size and shape are possible. Thus, NWs are promising materials for nanoscale light sources applicable from visible to telecommunication bands. In this study, we grew InP/InAsP/InP axial heterostructure NWs, where the InAsP layer was embedded to serve as an active layer, by selective-area growth and demonstrated vertical NW array light-emitting diodes (LEDs) as a step towards realizing on-demand single photon sources. The NW array LEDs showed rectifying characteristics and electroluminescence originating from the embedded InAsP layer in the near-infrared region.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Creative Commons Attribution 4.0 International
PISSN
0957-4484
NCID
AA10863359
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1088/1361-6528/ab9bd2