open access

https://hdl.handle.net/2115/79367

Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation

英語

2019-09-11

IOP Publishing

Japanese Journal of Applied Physics (JJAP)

58(10)

106504

Control of the plasma-CVD SiO2/InAlN interface by N2O plasma oxidation of the InAlN surface was studied. The interface was characterized by both X-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurement of metal-insulator-semiconductor (MIS) diodes. An excessively long duration of oxidation led to the deterioration of the stoichiometry of the InAlN surface and plasma oxide, resulting in a high-density of interface states in the completed MIS diodes. Meanwhile, the surface-localized oxygen deficiency in the plasma oxide layer was observed by XPS. The intensity ratio of the oxygen-deficient component to the fully oxidized component in the O 1s spectrum decreased with increasing oxidation duration. Consequently, there was an optimum oxidation duration. The interface state density was reduced by almost one order in the case of plasma oxidation for an appropriate duration compared with the case of the direct deposition of SiO2 onto InAlN. (C) 2019 The Japan Society of Applied Physics

学術雑誌論文

Accepted Manuscript

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/1347-4065/ab3c49

0021-4922

AA12295836