open access

https://hdl.handle.net/2115/80627

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films

英語

2020-03-21

American Institute of Physics (AIP)

Journal of Applied Physics

127(11)

115701

La-doped ASnO(3) (A=Ba and Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties is not trivial, and property optimization has been challenging. Here, we propose a simple metric for quantifying the transport properties of ASnO(3). We investigated the electron/thermal transport properties of Ba1-xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that all the transport properties of Ba1-xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists of the conduction band. Published under license by AIP Publishing.

学術雑誌論文

Version of Record

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Cho Hai Jun, Sato Koichi, Wei Mian, Kim,Gowoon, Ohta,Hiromichi. Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films. Journal of Applied Physics, 127(11), 115701, 2020 and may be found at https://doi.org/10.1063/5.0002172 .

0021-8979