open access

https://hdl.handle.net/2115/80771

Filamentary switching of ReRAM investigated by in-situ TEM

英語

2020-03-04

IOP Publishing

Japanese Journal of Applied Physics

59

SG0803

The filament operation of resistive random-access memory was studied via in-situ transmission electron microscopy, and the contribution of the conductive filament to the resistance switching was experimentally confirmed. In addition to the operation principles the device degradation mechanism was studied through repeated write/erase operations. The importance of controlling Cu movement in the switching layer was confirmed for stable CBRAM (conductive bridge random access memory) operations. A device structure with double switching layers and device miniaturization was effective in restricting over accumulation of Cu in the switching layer and localizing the filament. This may improve the robustness of the device against performance degradation. (C) 2020 The Japan Society of Applied Physics

学術雑誌論文

Accepted Manuscript

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab709d

0021-4922