open access

https://hdl.handle.net/2115/81123

Electron energy-loss spectroscopic evaluation of depth-dependent swelling of He+ ion-irradiated 4H-SiC correlated with defect type

英語

2020-05-07

American Institute of Physics (AIP)

Journal of Applied Physics

127(17)

175106

Various defects and amorphous transitions are the primary mechanism behind the accumulation of swelling in silicon carbide (SiC). In this study, selected-area He+ ion irradiation was carried out on single-crystal 4H-SiC using fluences of 1x10(15), 5x10(16), and 1x10(17)cm(-2) at room temperature. The defect distribution in the samples with varying irradiation fluences was analyzed using transmission electron microscopy (TEM), while the local swelling of regions under varying damage conditions was estimated using electron energy-loss spectroscopy. The results provide the range of swelling in SiC possessing different primary defect types, such as point defects or tiny clusters, black spot defects, and amorphous SiC. A saturation swelling with a value of 2%-3% in the near-surface region, induced by point defects or tiny clusters (invisible in TEM), was observed at room temperature over the fluence range of 1x10(15) to 1x10(17)cm(-2). This saturation has already reached at a great low dose of about 0.02dpa. The swelling of the region containing black spot defects ranges from about 3% to 7%. Helium bubbles increase the volume swelling of SiC, while the He+ ion irradiation may also perform a decreasing effect on the volume swelling below a certain irradiation fluence.

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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 127, 175106 (2020) and may be found at https://aip.scitation.org/doi/10.1063/1.5143399

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