Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

Etou, Kohei; Hiura, Satoshi; Park, Soyoung et al.

Physical review applied, 2021, 16(1), 014034

Permalink : https://hdl.handle.net/2115/82469

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アクセス権
open access
URI
https://hdl.handle.net/2115/82469
タイトル
Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode
著者
Etou, Kohei ; Hiura, Satoshi ; Park, Soyoung ; Sakamoto, Kazuya ; Takayama, Junichi ; Subagyo, Agus ; Sueoka, Kazuhisa ; Murayama, Akihiro
著者名
Etou, Kohei
著者名
Hiura, Satoshi
著者名
Park, Soyoung
著者名
Sakamoto, Kazuya
著者名
Takayama, Junichi
e-Rad_Researcher
30374599
著者名
Subagyo, Agus
e-Rad_Researcher
60250479
著者名
Sueoka, Kazuhisa
e-Rad_Researcher
00333906
著者名
Murayama, Akihiro
言語
英語
発行日
2021-07-14
出版者
American Physical Society (APS)
収録物名
Physical review applied
巻(号)
16(1)
ページ
014034
抄録
An understanding of the spin-transport properties in semiconductor barriers is essential to improve the performance of spin-polarized light-emitting diodes (spin LEDs) for future optospintronics integration in information processing. Here, we report on the temperature and bias-voltage dependence of spin-transport properties in an In0.5Ga0.5As quantum dot (QD) spin LED using a combination of spin-dependent electroluminescence (EL) and time-resolved photoluminescence. The QD EL spin polarization increases with an increase in temperature above 125 K; this is attributed to the improved conversion efficiency from spin polarization of electrons to circular polarization of photons of the QDs. We find that both the electric field and temperature can enhance spin relaxation in the undoped GaAs barrier above 200 K. At 298 K, the QD EL spin polarization decreases beyond 2.5 V; this is attributed to the enhanced D'yakonov Perel' spin relaxation in the undoped GaAs barrier caused by the increase in electron temperature. This study provides valuable insights into the spin-relaxation mechanism in the semiconductor barrier during the room-temperature operation of the QD spin LED.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
©2021 American Physical Society
PISSN
2331-7019
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1103/PhysRevApplied.16.014034