Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Fujita, F.; Homma, A.; Oshiki, Y.; Kaneko, J. H.; Tsuji, K.; Meguro, K.; Yamamoto, Y.; Imai, T.; Teraji, T.; Sawamura, T.; Furusaka, M.

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser

Fujita, F.; Homma, A.; Oshiki, Y. et al.

Diamond and Related Materials, 2005, 14(11-12), 1992-1994

Permalink : https://hdl.handle.net/2115/8291

このアイテムのアクセス数:1,617件（2026-03-10 03:48 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
DaRM14	pdf	116 KB	1,988

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/8291
タイトル	Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser
著者	Fujita, F. ; Homma, A. ; Oshiki, Y. ; Kaneko, J. H. ; Tsuji, K. ; Meguro, K. ; Yamamoto, Y. ; Imai, T. ; Teraji, T. ; Sawamura, T. ; Furusaka, M.
e-Rad_Researcher 10002312 著者名 Fujita, F.
著者名 Homma, A.
著者名 Oshiki, Y.
e-Rad_Researcher 90333624 著者名 Kaneko, J. H.
著者名 Tsuji, K.
著者名 Meguro, K.
著者名 Yamamoto, Y.
著者名 Imai, T.
著者名 Teraji, T.
著者名 Sawamura, T.
著者名 Furusaka, M.
言語	英語
キーワード	time of flight
	UV pulse laser
	carrier drift velocity
	CVD diamond
発行日	2005-12
出版者	Elsevier
収録物名	Diamond and Related Materials
巻(号)	14(11-12)
ページ	1992-1994
記述	http://www.sciencedirect.com/science/journal/09259635
抄録	There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse width. In order to realize response times faster than 20 ns, we employed a 50 Ω coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0925-9635
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.diamond.2005.08.003