open access

https://hdl.handle.net/2115/83045

Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors

英語

monolayer

2020-10-23

American Chemical Society

ACS Applied Nano Materials

3(10)

10462-10469

Developing a technology to terminate chalcogen vacancies for transition-metal dichalcogenides is a crucial task for applications, such as transistors, diodes, and sensors, because chalcogen vacancies degrade the electronic and optical properties. This article reports a healing method of S vacancies in MoS2 by high-pressure annealing under a S vapor pressure of 5 atm. The crystal quality after mechanical transfer, S annealing, and vacuum annealing was systematically studied by observing the photoluminescence (PL). The remarkable recovery of the A-exciton emission peak in the PL spectrum indicated repair of the crystal quality in MoS2 by the S annealing. We also demonstrated that the S vacancies could be terminated by Se atoms using a high-pressure annealing method. The crystal quality of MoS2(1-x)Se2x alloys was confirmed by transmission electron microscopy and electron diffraction.

学術雑誌論文

Accepted Manuscript

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://doi.org/10.1021/acsanm.0c02385.

2574-0970