Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi

Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika et al.

Applied Physics Express, 2021, 14(11), 111003

Permalink : https://hdl.handle.net/2115/83317

このアイテムのアクセス数:610件（2026-10-07 16:31 集計）

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https://doi.org/10.35848/1882-0786/ac2d45			32

論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/83317
タイトル	Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment
著者	Shimauchi, Michihito ; Miwa, Kazuki ; Toguchi, Masachika ; Sato, Taketomo ; Motohisa, Junichi
著者名 Shimauchi, Michihito
著者名 Miwa, Kazuki
著者名 Toguchi, Masachika
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi
言語	英語
キーワード	GaN
	Electrochemial etching
	nanowire
発行日	2021-11-01
出版者	IOP Publishing
収録物名	Applied Physics Express
巻(号)	14(11)
ページ	111003
抄録	We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selectively etched using a Ti mask in a mixed solution of K2S2O8 and KOH under UV light radiation. This specific layer structure required a relatively concentrated KOH solution for etching. The PEC etching resulted in the formation of a tapered cone structure of GaN with its top diameter determined by the mask size. Successive KOH treatment after PEC etching yielded GaN nanowires with diameters of about 220 nm.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	©2021 The Japan Society of Applied Physics
PISSN	1882-0778
NCID	AA12295133
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.35848/1882-0786/ac2d45