open access

https://hdl.handle.net/2115/8363

Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires

英語

Schottky wrap gate

2001-10

Elsevier

Physica E: Low-dimensional Systems and Nanostructures

11(2-3)

149-154

Previous quantum device research has been done on discrete device levels and lacks a clear vision for high density integration. This paper proposes a new, simple and realistic approach for quantum large scale integrated circuits (QLSIs) where a binary-decision diagram (BDD) logic architecture is implemented by BDD node devices based on quantum wire transistors (QWTrs) and single electron transistors (SETs) realized by the Schottky in-plane gate (IPG) and wrap-gate (WPG) control of III-V hexagonal nanowire networks. To investigate the feasibility of the proposed approach, BDD devices having QWTrs were formed on GaAs/AlGaAs etched nanowire patterns. They showed expected complimentary quantized conductance switching as required to achieve operation at delay-power products near the quantum limit. Use of embedded InGaAs honeycomb wire networks grown by selective MBE on InP substrates is proposed for constructing circuits operating in quantum regime at room temperature.

学術雑誌論文

Accepted Manuscript

1386-9477