open access

https://hdl.handle.net/2115/83637

Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO(3) by Modulating the Size of A-Ions

英語

lattice parameter

2020-12-22

American Chemical Society

ACS Applied Electronic Materials

2(12)

3971-3976

Recently, La-doped ASnO(3) (A = Ba, Sr, and Ca) films have attracted increasing attention as an active channel of deep-ultraviolet transparent thin-film transistors, owing to their wide band gap and high electrical conductivity. However, the effect of A-site substitution on the optoelectronic properties of ASnO(3) has not been clarified in a detailed systematic study. Here, we show that the optoelectronic properties of ASnO(3) can be tuned systematically by changing the average size of the A-site ion. We heteroepitaxially fabricated ASnO(3) films on (001) LaAlO3 substrates and measured their optical absorption spectra and electron transport properties. The lattice parameter almost lineal I increased from 3.95 to 4.14 with increasing ionic radius of the Asite ion from 1.34 (Ca2+) to 1.61 A (Ba2+), whereas the optical band gap gradually decreased from similar to 4.6 to similar to 3.6 eV with a small positive bowing. With increasing the lattice parameter, the electrical conductivity gradually increased from similar to 10(0) to similar to 10( )(3)S cm(-1) because of gradual increases in both the carrier concentration and mobility. The present results are of significant importance for designing ASnO(3)-based transparent electronic devices.

学術雑誌論文

Accepted Manuscript

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsaelm.0c00806 .

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