Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors

Kasai, S.; Hasegawa, H.

Springer Proceedings in Physics, 2001, 87(2), 1817-1818

Permalink : https://hdl.handle.net/2115/8367

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URI	https://hdl.handle.net/2115/8367
タイトル	Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors
著者	著者名 Kasai, S.
著者	著者名 Hasegawa, H.
言語	英語
発行日	2001
出版者	Springer
収録物名	Springer Proceedings in Physics
巻(号)	87(2)
ページ	1817-1818
抄録	Conductance oscillation characteristics of a Schottky wrap-gate controlled single electron transistor (WPG SET) were investigated. The device showed a small number of high conductance peaks and they were visible up to 30 K. These features were explained by a lateral single electron resonant tunneling. The line width of the resonant state was estimated to be 1.5 meV and indicated the strong coupling between dot and leads. In low temperatures where kT was much smaller than addition energy, the device showed an unusual temperature dependence of the peak width, whose behavior was different from that expected from the theory.
会議記述	会議名 International Conference on the Physics of Semiconductors 回次 25 開催地 Osaka 開催国 Japan
資源タイプ	会議発表論文
出版タイプ	Accepted Manuscript
権利情報	The original publication is available at www.springerlink.com
関連情報 (isPartOf)	Title Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II