open access

https://hdl.handle.net/2115/83696

Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO2-Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation : Implications for Flat-Panel Displays

英語

HfO2 gate insulator

2020-12-24

American Chemical Society

ACS Applied Nano Materials

3(12)

12427-12432

Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, amorphous (a-) SnO2 is promising active material due to its abundance compared with the state-of-the-art a-InGaZnO4. However, practical application of a-SnO2-based TFTs has not been realized because of its unstable transistor characteristics coming from the high residual carrier concentration. Precise optimization of the two-dimensional channel thickness is required to stabilize the transistor characteristics of a-SnO2 based TFTs. Here we use electric field thermopower modulation analyses to show that the two-dimensional channel thickness of a-SnO2 for TFT can be optimized at similar to 2 nm. After the optimization of the channel thickness, we reduced the thickness of the HfO2 gate insulator film to further improve the transistor characteristics. The resultant TFT exhibited excellent transistor characteristics: on-to-off current ratio of similar to 10(5), normally off behavior (Vth approximate to +0.65 V), small subthreshold swing of'similar to 230 mV/decade, high mobility (similar to 10 cm(2) V-1 s(-1)), and stability in changing oxygen atmospheres. The present results would bring further possibilities for the development of next-generation low-cost and low-power electronic devices.

学術雑誌論文

Accepted Manuscript

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsanm.0c03069 .

2574-0970