open access

https://hdl.handle.net/2115/83719

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

英語

2020-12-15

IOP Publishing

Japanese Journal of Applied Physics

60(1)

016502

Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10(12) cm(-2). MOS diodes were used to characterize the implanted GaN after 300 degrees C annealing for 3 h and after additional 500 degrees C annealing for 3 min. Although capacitance-voltage (C-V) characteristics varied with the dosage, the effects of acceptor-like defects induced by ion implantation were observed in the C-V characteristics independently of dosage and annealing temperature. A defect level at approximately 0.25 eV below the conduction band edge was detected electrically. By positron annihilation spectroscopy, its origin was identified as a divacancy consisting of Ga and N vacancies. It was found that its density compared with that of as-implanted GaN decreased with 300 degrees C annealing, and further increased with 500 degrees C annealing. This phenomenon was explained on the basis of the difference between the diffusion barriers of possible point defects.

学術雑誌論文

Accepted Manuscript

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/abcf08

0021-4922