open access

https://hdl.handle.net/2115/83719

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

英語

2021-01-01

IOP Publishing

Japanese Journal of Applied Physics (JJAP)

60(1)

016502

Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10(12) cm(-2). MOS diodes were used to characterize the implanted GaN after 300 degrees C annealing for 3 h and after additional 500 degrees C annealing for 3 min. Although capacitance-voltage (C-V) characteristics varied with the dosage, the effects of acceptor-like defects induced by ion implantation were observed in the C-V characteristics independently of dosage and annealing temperature. A defect level at approximately 0.25 eV below the conduction band edge was detected electrically. By positron annihilation spectroscopy, its origin was identified as a divacancy consisting of Ga and N vacancies. It was found that its density compared with that of as-implanted GaN decreased with 300 degrees C annealing, and further increased with 500 degrees C annealing. This phenomenon was explained on the basis of the difference between the diffusion barriers of possible point defects.

学術雑誌論文

Accepted Manuscript

©2021 The Japan Society of Applied Physics

0021-4922