Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures

Hasegawa, Hideki; Sato, Taketomo

Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures

Hasegawa, Hideki; Sato, Taketomo

Electrochimica Acta, 2005, 50(15), 3015-3027

Permalink : https://hdl.handle.net/2115/8383

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アクセス権	open access
URI	https://hdl.handle.net/2115/8383
タイトル	Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures
著者	著者名 Hasegawa, Hideki
著者	e-Rad_Researcher 50343009 著者名 Sato, Taketomo
言語	英語
キーワード	III-V semiconductors
	anodic etching
	nanopore
	electrodeposition
	Schottky barrier
発行日	2005-05-20
出版者	Elsevier
収録物名	Electrochimica Acta
巻(号)	50(15)
ページ	3015-3027
抄録	This paper reviews recent efforts by authors’ group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>- oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0013-4686
関連情報	URI http://www.sciencedirect.com/science/journal/00134686
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.electacta.2004.11.066