Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism

Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki

Institute of Physics conference series, 2003, 174, 145-148

Permalink : https://hdl.handle.net/2115/8386

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アクセス権	open access
URI	https://hdl.handle.net/2115/8386
タイトル	Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism
著者	Sato, Taketomo ; Tamai, Isao ; Hasegawa, Hideki
著者名 Sato, Taketomo
著者名 Tamai, Isao
著者名 Hasegawa, Hideki
言語	英語
発行日	2003
出版者	Institute of Physics
収録物名	Institute of Physics conference series
巻(号)	174
ページ	145-148
抄録	The selective MBE growth of the <-110>-oriented GaAs ridge QWRs were made in a basis of the proper understanding of growth mechanism on pre-patterned (001) substrates. The arrow-head shaped GaAs wire was selectively formed on the top (113)A facets of GaAs ridge structure utilizing the enhanced growth selectivity against to side (111)A facets. The wire width could be kinetically controlled by the growth process.
資源タイプ	会議発表論文
出版タイプ	Accepted Manuscript
権利情報	copyright (C) 2003 IOP Publishing Ltd.
関連情報	URI http://www.iop.org