Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates

Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki

Physica E: Low-dimensional Systems and Nanostructures, 2004, 21(2-4), 521-526

Permalink : https://hdl.handle.net/2115/8387

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アクセス権	open access
URI	https://hdl.handle.net/2115/8387
タイトル	Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates
著者	Tamai, Isao ; Sato, Taketomo ; Hasegawa, Hideki
著者名 Tamai, Isao
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
著者名 Hasegawa, Hideki
言語	英語
キーワード	selective MBE growth
	quantum wire
	network
	GaAs
	AlGaAs
発行日	2004-03
出版者	Elsevier
収録物名	Physica E: Low-dimensional Systems and Nanostructures
巻(号)	21(2-4)
ページ	521-526
抄録	Attempts were made to grow high-density GaAs hexagonal nano-wire networks on (001) patterned substrates by selective molecular beam epitaxy (MBE). To form a hexagon, < -1 0 1 >- and < 5 1 0 >- directions were combined. By the growth of straight wire arrays in each direction, the growth mode, conditions and mechanism were investigated. The wire width was shown to be determined for both directions by the facet boundary planes resulting from the growth rate difference on different facets. By optimizing of growth condition, highly uniform and smoothly connected hexagonal nano-wire networks with a density of 3x10^8 cm^-2 were successfully formed.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	1386-9477
関連情報	URI http://www.sciencedirect.com/science/journal/13869477
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.physe.2003.11.080