Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates

Zhang, X. Q; Yao, Z. G; Huang, S. H; Suemune, I.; Kumano, H.

Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates

Zhang, X. Q; Yao, Z. G; Huang, S. H et al.

Journal of Applied Physics, 2006, 99(6), 063709

Permalink : https://hdl.handle.net/2115/8394

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アクセス権	open access
URI	https://hdl.handle.net/2115/8394
タイトル	Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates
著者	Zhang, X. Q ; Yao, Z. G ; Huang, S. H ; Suemune, I. ; Kumano, H.
著者名 Zhang, X. Q
著者名 Yao, Z. G
著者名 Huang, S. H
e-Rad_Researcher 00112178 著者名 Suemune, I.
著者名 Kumano, H.
言語	英語
発行日	2006-03
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	99(6)
ページ	063709
抄録	High-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three excitonic transitions associated with valence bands A, B, and C are clearly revealed in the reflectance spectrum measured at low temperatures. This result indicates that the ZnO thin films have a perfect wurtzite crystal structure. Biexciton emission is observed in the photoluminescence spectra at low temperatures, from which the biexciton binding energy is estimated to be 14.5 meV, in good agreement with previous results. Exciton-LO (Ex-LO) and exciton-2LO (Ex-2LO) photon emission peaks are observed at low temperature. The energy difference between the Ex-LO and Ex-2LO bands is about 72.5 meV, which coincides with previously reported values of the LO phonon energy for ZnO thin films.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2006 American Institute of Physics
PISSN	0021-8979
NCID	AA00693547
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2183354