X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces

Akazawa, Masamichi; Shiozaki, Nanako; Hasegawa, Hideki

Journal de Physique IV, 2006, 132, 95-99

Permalink : https://hdl.handle.net/2115/8495

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アクセス権	open access
URI	https://hdl.handle.net/2115/8495
タイトル	X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
著者	Akazawa, Masamichi ; Shiozaki, Nanako ; Hasegawa, Hideki
e-Rad_Researcher 30212400 著者名 Akazawa, Masamichi 赤澤, 正道
著者名 Shiozaki, Nanako
e-Rad_Researcher 60001781 著者名 Hasegawa, Hideki
言語	英語
発行日	2006
出版者	EDP Sciences
収録物名	Journal de Physique IV
巻(号)	132
ページ	95-99
抄録	Applicability of the Si interface control layer (Si ICL)-based surface passivation to GaAs and AlGaAs (111)B surfaces was investigated. An in-situ X-ray photoelectron spectroscopy (XPS) study confirmed formation of the intended passivation structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong Fermi level pinning. After Si ICL growth, large shifts of the surface Fermi level position were observed. Photoluminescence (PL) measurements were also used to examine the surfaces of AlGaAs/GaAs quantum well and quantum wire structures grown on the GaAs (111)B substrates. PL intensity reduction caused by surface states was recovered remarkably by the Si ICL–based passivation.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© EDP Sciences 2006
PISSN	1155-4339
EISSN	1764-7177
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1051/jp4:2006132019