Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices

Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi et al.

Journal de Physique IV, 2006, 132, 249-253

Permalink : https://hdl.handle.net/2115/8505

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アクセス権	open access
URI	https://hdl.handle.net/2115/8505
タイトル	Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
著者	Shiozaki, Nanako ; Sato, Taketomo ; Akazawa, Masamichi ; Hasegawa, Hideki
著者名 Shiozaki, Nanako
e-Rad_Researcher 50343009 著者名 Sato, Taketomo
e-Rad_Researcher 30212400 著者名 Akazawa, Masamichi
著者名 Hasegawa, Hideki
言語	英語
発行日	2006-03
出版者	EDP Sciences
収録物名	Journal de Physique IV
巻(号)	132
ページ	249-253
抄録	For controlled low-damage etching of AlGaAs/GaAs nanostructures, fundamental properties of an etching process consisting of anodic oxidation and subsequent oxide dissolution are investigated both theoretically and experimentally. Anodic oxides formed on GaAs (001) and (111)B surfaces have the same composition and the same anodization parameters according to XPS, SEM and AFM measurements. The same applies to those formed on Al0.3Ga0.7As (001) and (111)B surfaces. The etching depth can be precisely controlled in nanometer scale by the anodization voltage. Selective etching was realized, using the lithography patterns. The surface morphology is much better than that in the standard wet chemical etching.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© EDP Sciences 2006
PISSN	1155-4339
EISSN	1764-7177
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1051/jp4:2006132047