Thermally driven single-electron stochastic resonance

Kasai, Seiya

Thermally driven single-electron stochastic resonance

Kasai, Seiya

Nanotechnology, 2022, 33(50), 505203

Permalink : https://hdl.handle.net/2115/87092

このアイテムのアクセス数:372件（2026-08-09 10:44 集計）

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ファイル	フォーマット	サイズ	閲覧回数	説明
https://doi.org/10.1088/1361-6528/ac9188			25

論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/87092
タイトル	Thermally driven single-electron stochastic resonance
著者	e-Rad_Researcher 30312383 著者名 Kasai, Seiya
言語	英語
キーワード	single electron
	stochastic resonance
	thermal fluctuation
	GaAs nanowire
	theoretical model
	nonlinear
発行日	2022-10-03
出版者	IOP Publishing
収録物名	Nanotechnology
巻(号)	33(50)
ページ	505203
抄録	Stochastic resonance (SR) in a single-electron system is expected to allow information to be correctly carried and processed by single electrons in the presence of thermal fluctuations. Here, we comprehensively study thermally driven single-electron SR. The response of the system to a weak voltage signal is formulated by considering the single-electron tunneling rate, instead of the Kramers' rate generally used in conventional SR models. The model indicates that the response of the system is maximized at finite temperature and that the peak position is determined by the charging energy. This model quantitatively reproduces the results of a single-electron device simulator. Single-electron SR is also demonstrated using a GaAs-based single-electron system that integrates a quantum dot and a high-sensitivity charge detector. The developed model will contribute to our understanding of single-electron SR and will facilitate accurate prediction, design, and control of single-electron systems.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
PISSN	0957-4484
EISSN	1361-6528
NCID	AA10863359
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1088/1361-6528/ac9188