open access

https://hdl.handle.net/2115/87883

Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN

英語

encapsulant

2022-02-03

Springer

Journal of electronic materials

51(4)

1731-1739

The encapsulant-dependent effects of long-term low-temperature annealing on defects in Mg-ion-implanted GaN were investigated using metal-oxide-semiconductor (MOS) diodes. Annealing was carried out at 600 degrees C under nitrogen flow without or with a cap layer of Al2O3, SiO2, or SiN. For annealing at 600 degrees C for 3 h, the capacitance-voltage characteristics of the Al2O3 cap annealed samples indicated the existence of acceptor-like defects, whereas those of the capless, SiO2 cap and SiN cap annealed samples exhibited bumps, which indicated the existence of a donor-like defect level at around 0.8 eV from the conduction band edge E-C. A more distinct result was obtained for annealing at 600 degrees C for 30 h. Namely, annealing of samples with the Al2O3 cap layer induced an acceptor-like defect level at E-C-0.9 eV, whereas that with the SiN cap layer induced a donor-like defect level at E-C-0.8 eV. Secondary ion mass spectroscopy and transmission electron microscopy studies revealed that interstitial Ga (Ga-i) in Mg-implanted GaN diffused into the Al2O3 cap layer but not into the SiN cap layer after annealing. Most likely, the detected E-C-0.8 eV level can be assigned to interstitial Ga-i.

学術雑誌論文

Accepted Manuscript

This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1007/s11664-022-09431-y

0361-5235

1543-186X

AA00697093