Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots

Kise, Hiroto; Hiura, Satoshi; Park, Soyoung; Takayama, Junichi; Sueoka, Kazuhisa; Murayama, Akihiro

Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots

Kise, Hiroto; Hiura, Satoshi; Park, Soyoung et al.

Applied physics letters, 2023, 122(23), 232405

Permalink : https://hdl.handle.net/2115/92574

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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/92574
タイトル	Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots
著者	Kise, Hiroto ; Hiura, Satoshi ; Park, Soyoung ; Takayama, Junichi ; Sueoka, Kazuhisa ; Murayama, Akihiro
著者名 Kise, Hiroto
著者名 Hiura, Satoshi
e-Rad_Researcher 10628556 著者名 Park, Soyoung
e-Rad_Researcher 90126590 著者名 Takayama, Junichi
e-Rad_Researcher 60250479 著者名 Sueoka, Kazuhisa
e-Rad_Researcher 00333906 著者名 Murayama, Akihiro
言語	英語
キーワード	Spintronics
	Electronic transport
	Quantum dots
	Semiconductors
	Superlattices
	Quantum wells
	Electric fields
	Time-resolved photoluminescence
	Polarization
発行日	2023-06-05
出版者	AIP Publishing
収録物名	Applied physics letters
巻(号)	122(23)
ページ	232405
抄録	Electric-field control of spin polarization of electrons during injection into InGaAs quantum dots (QDs) was studied via circularly polarized time-resolved photoluminescence. Electric-field modulation of optical spin polarization in QDs will play a key role in future progress of semiconductor opto-spintronics. The tuning of band potentials by applying external electric fields can not only affect spin-injection efficiencies but also switch dominant spin-injection layers. In this study, we developed a QD-based electric-field-effect optical spin device with two different spin-injection layers, which consisted of a GaAs and GaAs/Al0.15Ga0.85As superlattice (SL) barriers. The bias-voltage modulation of the optical spin polarization in QDs was demonstrated by changing the spin polarization degree of electrons injected from these barriers into the QD via the electric-field switching of the spin-injection layers. This was achieved by exploiting the difference in spin relaxation properties between bulk GaAs and the SL. This proposed structure, which comprised of one luminescent layer and two spin-injection layers, is highly scalable because the modulation range of optical spin polarization can be enhanced by changing the combination of spin-injection layers, as well as the material used and its layer thickness.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 122, 232405 (2023) and may be found at https://doi.org/10.1063/5.0151467.
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/5.0151467