GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Nakama, Kaito; Yukimune, Mitsuki; Kawasaki, Naohiko; Higo, Akio; Hiura, Satoshi; Murayama, Akihiro; Jansson, Mattias; Chen, Weimin M.; Buyanova, Irina A.; Ishikawa, Fumitaro

GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Nakama, Kaito; Yukimune, Mitsuki; Kawasaki, Naohiko et al.

Applied physics letters, 2023, 123(8), 081104

Permalink : https://hdl.handle.net/2115/92970

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アクセス権	open access
URI	https://hdl.handle.net/2115/92970
タイトル	GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range
著者	Nakama, Kaito ; Yukimune, Mitsuki ; Kawasaki, Naohiko ; Higo, Akio ; Hiura, Satoshi ; Murayama, Akihiro ; Jansson, Mattias ; Chen, Weimin M. ; Buyanova, Irina A. ; Ishikawa, Fumitaro
著者名 Nakama, Kaito
著者名 Yukimune, Mitsuki
著者名 Kawasaki, Naohiko
著者名 Higo, Akio
著者名 Hiura, Satoshi
e-Rad_Researcher 00333906 著者名 Murayama, Akihiro
著者名 Jansson, Mattias
著者名 Chen, Weimin M.
著者名 Buyanova, Irina A.
e-Rad_Researcher 60456994 著者名 Ishikawa, Fumitaro
言語	英語
キーワード	Heterostructures
	Optoelectronic devices
	Quantum wells
	Telecommunications
	Epitaxy
	Scanning electron microscopy
	Photoluminescence spectroscopy
	Thin films
	Nanowires
	Plasma sources
発行日	2023-08-21
出版者	AIP Publishing
収録物名	Applied physics letters
巻(号)	123(8)
ページ	081104
抄録	Semiconducting nanowires (NWs) fabricated from III-V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires' core are carried out by Ga-induced vapor-liquid-solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs' peak. Their emission wavelength increases with the N content reaching up to 1.26 mu m, which makes them a promising tool in telecommunication light sources.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kaito Nakama, Mitsuki Yukimune, Naohiko Kawasaki, Akio Higo, Satoshi Hiura, Akihiro Murayama, Mattias Jansson, Weimin M. Chen, Irina A. Buyanova, Fumitaro Ishikawa; GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range. Appl. Phys. Lett. 21 August 2023; 123 (8): 081104 and may be found at https://doi.org/10.1063/5.0160080.
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/5.0160080