High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential

Morita, Ayano; Hiura, Satoshi; Takayama, Junichi; Murayama, Akihiro

High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential

Morita, Ayano; Hiura, Satoshi; Takayama, Junichi et al.

Journal of Applied Physics, 2023, 134(22), 224303

Permalink : https://hdl.handle.net/2115/93769

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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/93769
タイトル	High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential
著者	Morita, Ayano ; Hiura, Satoshi ; Takayama, Junichi ; Murayama, Akihiro
著者名 Morita, Ayano
著者名 Hiura, Satoshi
著者名 Takayama, Junichi
著者名 Murayama, Akihiro
言語	英語
キーワード	Electronic band structure
	Optical communications
	Time-resolved photoluminescence
	Quantum dots
	Semiconductor materials
	Scanning electron microscopy
	Lasers
発行日	2023-12-14
出版者	AIP Publishing
収録物名	Journal of Applied Physics
巻(号)	134(22)
ページ	224303
抄録	The temperature dependence of the optical properties of In0.4Ga0.6As0.98N0.02 quantum dots (QDs) was investigated using continuous-wave and time-resolved photoluminescence (PL). Significant increases in the PL peak energy and the PL linewidth were observed at temperatures above 200 K, which reflected the high luminescence efficiency of ground and excited states at high temperatures. The PL decay times of the ground state were almost constant between 200 and 300 K at 200-220 ps, which were significantly longer than that of 38 ps for the In0.4Ga0.6As QDs at 300 K. The temperature independence of the PL decay time represents significant suppression of the thermal escape and the thermal excitation of electrons because the electron ground-state localization energy is much larger than the thermal energy. The PL intensity of the In0.4Ga0.6As0.98N0.02 QDs was seven times stronger than that of the In0.4Ga0.6As QDs at 300 K, and this tendency was maintained up to 400 K with a PL intensity one order of magnitude stronger. These findings demonstrate that lowering the QD conduction band by nitrogen incorporation is an effective approach for achieving strong QD luminescence above room temperature.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Ayano Morita, Satoshi Hiura, Junichi Takayama, Akihiro Murayama; High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential. J. Appl. Phys. 14 December 2023; 134 (22): 224303, and may be found at https://doi.org/10.1063/5.0173207
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/5.0173207