Development of differential amplifier circuits based on radiation hardened H-diamond MOSFET (RADDFET)

Fukushima, Hiroki; Tanaka, Manobu M.; Umezawa, Hitoshi; Kawashima, Hiroyuki; Masumura, Tadashi; Miyahara, Masaya; Deguchi, Yusei; Hoshikawa, Naohisa; Kaneko, Junichi H.

Development of differential amplifier circuits based on radiation hardened H-diamond MOSFET (RADDFET)

Fukushima, Hiroki; Tanaka, Manobu M.; Umezawa, Hitoshi et al.

Diamond and related materials, 2023, 134, 109758

Permalink : https://hdl.handle.net/2115/93997

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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/93997
タイトル	Development of differential amplifier circuits based on radiation hardened H-diamond MOSFET (RADDFET)
著者	Fukushima, Hiroki ; Tanaka, Manobu M. ; Umezawa, Hitoshi ; Kawashima, Hiroyuki ; Masumura, Tadashi ; Miyahara, Masaya ; Deguchi, Yusei ; Hoshikawa, Naohisa ; Kaneko, Junichi H.
著者名 Fukushima, Hiroki
著者名 Tanaka, Manobu M.
著者名 Umezawa, Hitoshi
著者名 Kawashima, Hiroyuki
著者名 Masumura, Tadashi
著者名 Miyahara, Masaya
著者名 Deguchi, Yusei
著者名 Hoshikawa, Naohisa
e-Rad_Researcher 90333624 著者名 Kaneko, Junichi H.
言語	英語
キーワード	Diamond
	MOSFET
	Differential amplification
	Radiation resistance
発行日	2023-04
出版者	Elsevier
収録物名	Diamond and related materials
巻(号)	134
ページ	109758
抄録	As one part of the development of electronic devices for use in high-temperature and high-radiation environ-ments, especially for use in containment vessels of nuclear power plants, a differential amplifier circuit based on hydrogen-terminated diamond MOSFETs that have excellent radiation resistance and high-temperature opera-tional capability were designed and fabricated. The 14 diamond MOSFETs were made using the same design on a 4-mm-square diamond single-crystal substrate. A FET model was fabricated from measured FET characteristics. Then the performance of differential amplifier circuit was simulated using the LTspice code. A differential amplifier part was formed using a pair of diamond MOSFETs with similar characteristics. In all, six diamond MOSFETs were used to construct the differential amplifier circuit. Then the circuit was operated in both inverting and non-inverting output modes. The maximum amplification factor was 4.7 for the non-inverting output at room temperature.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	© [2023], Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
PISSN	0925-9635
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.diamond.2023.109758